Group 4 metal element-containing compound, precursor composition including same, and method for manufacturing thin film using same
US12365700B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2021 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Dec 23, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure relates to a novel Group 4 metal element-containing compound having excellent thermal stability, a precursor composition including the compound, and a method for manufacturing a thin film using the precursor composition. The novel Group 4 metal element-containing compound according to the present disclosure and the vapor deposition precursor composition including the compound can have excellent thermal stability, realize thin film deposition in a wide temperature range, and reduce residues caused by heat loss, thereby preventing side reactions in a process. Additionally, the vapor deposition precursor composition according to the present disclosure can realize uniform thin film deposition, thereby securing excellent physical properties of the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.