AlN crystal preparation method, AlN crystals, and organic compound including AlN crystals
US12365823B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | May 28, 2020 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Mar 17, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing AlN crystals includes using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce AlN crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.