Processed wafer and processing method thereof
US12366008B2 · kind B2 · utility
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25Claims
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Key dates
| Filing date | Feb 24, 2022 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Dec 10, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A processed wafer includes an outer surface, and a treated portion having a depth of 0 to 50 μm measured from the outer surface. At least a part of the treated portion has an oxygen concentration of less than 13 wt %. A method for processing a wafer includes the steps of: applying a reducing medium on the wafer, the reducing medium is in powder form and including a reducing agent, and at least one of a catalyst and a releasing agent; subjecting the wafer to a reduction reaction at a temperature below Curie temperature of the and under a non-oxidizing atmosphere so as to obtain the aforesaid processed wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.