Infrared device and method for manufacturing the same
US12366482B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2022 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Mar 22, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/0853
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared device is provided. The infrared device includes a substrate, a metal layer, a first semiconductor layer, an absorber layer, and a second semiconductor layer. The metal layer is disposed on the substrate. The first semiconductor layer is disposed on the substrate and electrically connected to the metal layer. A cavity is formed between the first semiconductor layer and the metal layer. The absorber layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the absorber layer and electrically connected to the first semiconductor layer. The TCR of the first semiconductor layer is different from that of the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.