Horizontal hall device and preparation method
US12366614B2 · kind B2 · utility
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13Claims
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Assignee
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Key dates
| Filing date | Mar 18, 2024 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Mar 18, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A horizontal Hall device includes a substrate layer and a BOX layer arranged on the substrate layer, where an epitaxial layer is arranged on the BOX layer, a well layer is arranged on the epitaxial layer, an STI layer is arranged on the well layer, a pair of induction electrodes and a pair of bias electrodes are arranged on the STI layer, ground electrodes are arranged on the epitaxial layer, and current barrier layers are arranged between the induction electrodes and the adjacent bias electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.