Patent · US Active

Photonic integrated circuit

US12366708B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

PsiQuantum Corp. · US

Inventors

Vimal Kamineni · Mechanicville, US
Matteo Staffaroni · San Ramon, US
Faraz Najafi · Palo Alto, US
Ann Melnichuk · Rio Rancho, US
George Kovall · Campbell, US
Yong Liang · Shanghai, CN

Key dates

Filing date	Dec 15, 2022
Grant date	Jul 22, 2025
Priority date	—
Expiry date	Jul 27, 2043

Classification

Technology area (CPC G)Physics
CPC primaryG02B6/132
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, and a photodetector optically coupled to the waveguide. The photodetector is disposed above the waveguide layer and is monolithically integrated with the substrate. The photodetector is configured to operate at low temperatures, such as below about 50 K or about 20 K. In some embodiments, the monolithic photonic device includes thermal isolation structures and optical isolation structures. Techniques for manufacturing the monolithic photonic device, including the thermal isolation structures and optical isolation structures, are also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.