RF generating device and semiconductor manufacturing apparatus including the same
US12368022B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2022 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Jul 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/327
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) generating device for generating RF output signals is provided. The RF generating device includes: a controller configured to generate an RF control signal and a gain control signal; a plurality of RF signal generators, each RF signal generator being configured to generate an RF signal having at least one of a frequency and a phase determined based on the RF control signal; a plurality of RF amplification modules, each RF amplification module being configured to receive the RF signal generated by a corresponding RF signal generator and generate an RF amplification signal by controlling a gain of the RF signal based on the gain control signal; an RF switch module configured to select at least one of the RF amplification signals generated by the RF amplification modules and generate an RF output signal in a form of a multi-level pulse based on the selected at least one of the RF amplification signals; and an impedance converter connected to an electrode of an external load and configured to convert a load impedance into a target impedance having a target range, the load impedance being an impedance of the external load.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.