Info packages including thermal dissipation blocks
US12368148B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2024 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Mar 12, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.