O-band silicon-based high-speed semiconductor laser diode for optical communication and its manufacturing method
US12368282B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2021 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Oct 31, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention proposes an O-band silicon-based high-speed semiconductor laser diode for optical communication and its manufacturing method, by using different buffer layers to form the growth surface of InP material with low dislocation density; N—InAlGaAs is used instead of conventional N—InAlAs electron-blocking layer in the epi-structure to reduce the barrier for electrons to enter the quantum wells from N-type and lower the threshold; a superlattice structure quantum barrier is used instead of a single layer barrier structure to improve the transport of heavy holes in the quantum wells; and the material structure is adjusted to achieve a reliable O-band high direct modulation speed semiconductor laser diode for optical communication on silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.