Method for forming bulk acoustic wave resonance device
US12368426B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 5, 2019 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Nov 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for forming a bulk acoustic wave resonance device is provided, including forming a first stack, wherein forming the first stack includes: providing a first substrate; forming a piezoelectric layer on the first substrate; forming a first electrode layer on the piezoelectric layer; and forming a cavity pretreatment layer on the piezoelectric layer, wherein a first side of the first stack corresponds to a side of the first substrate, and a second side of the first stack corresponds to a side of the cavity pretreatment layer; forming a second stack, wherein forming the second stack includes providing a second substrate; joining the first stack and the second stack, wherein the second stack is disposed at the second side of the first stack; removing the first substrate; and forming a second electrode layer at the first side of the first stack and in contact with the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.