MIS capacitor and method of making a MIS capacitor
US12369335B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2022 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Mar 2, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/204
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A MIS capacitor and a method of making the same. The capacitor includes a semiconductor substrate having a first part having a first conductivity type and contact regions for coupling the first part to an output node. The substrate has dielectric on a surface of the first part and electrodes on the dielectric. The substrate has a second part having a second conductivity type and a third part having the first conductivity type. The third part is coupleable to a supply voltage. The second part is located between the first part and the third part. The first part and the second part form a first p-n junction and the second part and the third part form a second p-n junction. A reference contact is provided for coupling the second part to a reference voltage. A further contact region is provided for coupling the second part to the output node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.