Semiconductor device and method of fabricating the same
US12369353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2022 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Jan 14, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device including an active pattern extending in a first direction, a gate structure on the active pattern, the gate structure extending in a second direction different from the first direction and including a gate insulating layer and a gate filling layer, a gate spacer extending in the second direction, on a sidewall of the gate structure, a gate shield insulating pattern on a sidewall of the gate spacer, covering an upper surface of the gate insulating layer, and including an insulating material, and a gate capping pattern covering an upper surface of the gate filling layer, on the gate structure may be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.