Photoelectric conversion device and photodetection system
US12369423B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 21, 2022 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Aug 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The photoelectric conversion device includes a semiconductor layer provided with an avalanche photodiode, and an interconnection structure layer provided on a side of a first surface of the semiconductor layer. The interconnection structure layer includes an interconnection structure made of a metal material and overlapping with the avalanche multiplication region of the avalanche photodiode in a plan view. The interconnection structure includes a first interconnection, a second interconnection disposed farther from the first surface than the first interconnection, and a contact electrode electrically connecting the first interconnection and the second interconnection. An opening is provided in the first interconnection in a portion overlapping with the avalanche multiplication region in the plan view. The second interconnection is disposed so as to overlap an entire of the opening in the plan view. The contact electrode is arranged around the opening in the plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.