All-black crystalline silicon solar cell and preparation method therefor, and photovoltaic module
US12369429B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2023 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Feb 22, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed in the present invention are an all-black crystalline silicon solar cell and a preparation method therefor, and a photovoltaic module. The preparation method comprises the following steps: (1) depositing a film layer on the front face of a silicon wafer by means of a PECVD method so as to obtain a silicon wafer having a coated front face, wherein the film layer is of a laminated structure and comprises an innermost SiNx layer having a thickness of 20 nm or more; (2) subjecting the resulting silicon wafer having the coated front face to back-face PECVD and laser beam grooving so as to obtain a coarse silicon solar cell; and (3) subjecting the resulting coarse silicon solar cell to silk-screen printing and electron injection to then obtain an all-black crystalline silicon solar cell. In the preparation method provided in the present application, the film layer is deposited on the front face of the silicon wafer by means of the PECVD method, the material and thickness of the innermost SiNx layer are designed, and particularly when the thickness thereof is 20 nm or more, the absorption and reflection effects of incident light on the surface of the cell are influenced, such th…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.