LED epitaxial structure and preparation method and application thereof
US12369432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2022 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Feb 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application relates to an LED epitaxial structure and the preparation method and application thereof. The LED epitaxial structure comprises a first multiple-quantum-well light-emitting layer and a second multiple-quantum-well light-emitting layer. The first multiple-quantum-well light-emitting layer comprises a first shoes layer, a first well layer, a first cap layer, and a first Barrier layer epitaxially grown from bottom to top in sequence. The second multiple-quantum-well light-emitting layer comprises a second shoes layer, a second well layer, a second cap layer, and a second Barrier layer epitaxially grown from bottom to top in sequence. The technical solutions disclosed in the present application can solve the problem that the 365 nm to 375 nm wave band LED would emit yellow light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.