Patterning of high refractive index glasses by plasma etching
US12371368B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2022 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Feb 10, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N23/57
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Plasma etching processes for forming patterns in high refractive index glass substrates, such as for use as waveguides, are provided herein. The substrates may be formed of glass having a refractive index of greater than or equal to about 1.65 and having less than about 50 wt % SiO2. The plasma etching processes may include both chemical and physical etching components. In some embodiments, the plasma etching processes can include forming a patterned mask layer on at least a portion of the high refractive index glass substrate and exposing the mask layer and high refractive index glass substrate to a plasma to remove high refractive index glass from the exposed portions of the substrate. Any remaining mask layer is subsequently removed from the high refractive index glass substrate. The removal of the glass forms a desired patterned structure, such as a diffractive grating, in the high refractive index glass substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.