Cobalt compound, thin-film forming raw material, thin-film, and method of producing thin-film
US12371778B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Jun 28, 2022 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Jun 28, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a cobalt compound represented by the following general formula (1): where R1 to R7 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, a group represented by the following general formula (L-1), or a group represented by the following general formula (L-2); where R8 to R10 each independently represent an alkyl group having 1 to 5 carbon atoms, A1 and A2 each independently represent an alkanediyl group having 1 to 5 carbon atoms, and * represents a bonding site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.