Method of forming dielectric films, new precursors and their use in the semi-conductor manufacturing
US12371787B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jul 28, 2020 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Dec 1, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A Metal-containing film forming composition comprising a precursor having the formula: M(=NR1)(OR2)(OR3)mL. Wherein, M=V or Nb or Ta; R1-R3=independently H or C1-C10 alkyl group; L=Substituted or unsubstituted cyclopentadienes, cyclohexadienes, cycloheptadienes, cyclooctadienes, fluorenes, indenes, fused ring systems, propene, butadiene, pentadienes, hexadienes, heptadienes: m=0 or 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.