Electrically tunable quantum information processing device based on a doped semiconductor structure embedded with a defect
US12372850B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2020 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Jun 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/84
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This disclosure relates to optical devices for quantum information processing applications. In one example implementation, a semiconductor structure is provided. The semiconductor structure may be embedded with single defects that can be individually addressed. An electric bias and/or one or more optical excitations may be configured to control the single defects in the semiconductor structure to produce single photons for use in quantum information processing. The electric bias and optical excitations are selected and adjusted to control various carrier processes and to reduce environmental charge instability of the single defects to achieve optical emission with wide wavelength tunability and narrow spectral linewidth. Electrically controlled single photon source and other electro-optical devices may be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.