Semiconductor memory device
US12374401B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2023 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Feb 22, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device according to an embodiment includes: a driver for supplying a voltage, the driver in the first step, when a current flows through the first substring, the second substring, the third substring, or the fourth substring, performing a second step of applying the first voltage to the bit line, applying a fourth voltage higher than the third voltage to the third select gate line, the fourth select gate line, the fifth select gate line, and the sixth select gate line, and applying a fifth voltage higher than the third voltage and lower than the fourth voltage to the first word lines and the second word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.