Method for applying a cap layer to protect electrical components of a semiconductor device from e-beam irradiation
US12374553B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2022 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Nov 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication method for protecting an electrical component on a semiconductor device when subjected to exposure to highly energized electrons, such as those emitted during e-beam irradiation, is provided. An example method may include doping one or more lead-out regions providing an electrical connection to the electrical component of the semiconductor device. In addition, the method may further include forming the electrical component to electrically connect to at least one of the one or more lead-out regions by doping the surface of the semiconductor substrate with a second dopant. Further, the method may include forming a protective barrier on the surface of the semiconductor substrate, substantially aligned with the one or more lead-out regions. The method may further comprise creating one or more cap regions substantially covering the entire surface of the semiconductor except for the lead-out regions by doping the surface of the semiconductor with a third dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.