Method for manufacturing shallow trench isolation
US12374580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2022 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Nov 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application discloses a method for manufacturing shallow trench isolation, comprising: step 1: performing first time etching on a semiconductor substrate by means of a dry etching process to form the shallow trench, wherein in the first time etching, metal ions are released from a dry etching process chamber and deposited on the inner surface of the shallow trench, and the metal ions diffuse and form a contamination layer; and step 2: performing second time etching on the semiconductor substrate exposed on the inner surface of the shallow trench by means of a wet etching process to remove the contamination layer on the inner surface of the shallow trench. In the present application, the metal ions released from the dry etching process chamber and deposited on the inner surface of the shallow trench during the dry etching of the shallow trench can be removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.