Semiconductor device with improved internal and external electrode structure
US12374622B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2023 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Jun 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A terminal includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer that is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.