Semiconductor laser and LIDAR system and also laser system with the semiconductor laser

US12374860B2 · kind B2 · utility

Assignee

• ams-OSRAM International GmbH · DE

Inventors

• Peter Fuchs · Muttenz, CH
• Bruno JENTZSCH · Regensburg, DE
• Hubert Halbritter · Dietfurt, DE
• Martin Rudolf Behringer · Regensburg, DE
• Alvaro Gomez-Iglesias · Regensburg, DE
• Christian Lauer · Regensburg, DE
• Dean Maximilian Schoke · Regensburg, DE
• Tomasz Swietlik · Regensburg, DE

Key dates

• Filing date: Apr 21, 2021
• Grant date: Jul 29, 2025
• Expiry date: Jun 26, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/18
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance R1 of the first resonator mirror is wavelength-dependent, so that R1 or a product R of R1 and the reflectance R2 of the second resonator mirror in a wavelength range decreases from a target wavelength λ0 of the laser to λ0+Δλ from a value R0, wherein Δλ is selected as a function of a temperature-dependent shift in an emission wavelength.