Semiconductor structure and formation method thereof

US12376279B2 · kind B2 · utility

Assignee

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN

Inventor

• Xiaojie Li · Xi'an, CN

Key dates

• Filing date: Aug 1, 2022
• Grant date: Jul 29, 2025
• Expiry date: Jan 20, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/00

Abstract

Embodiments relates to a semiconductor structure and a formation method thereof. The method for forming a semiconductor structure includes: forming a stacked layer on a top surface of a substrate, where the stacked layer includes a plurality of semiconductor layers spaced along a first direction, the stacked layer includes a transistor region, and a capacitor region and a bit line region; forming a capacitor extending along the second direction in the capacitor region; forming a word line in the transistor region, the word line extending along the first direction; and forming a bit line in the bit line region, the bit line extending along the third direction.