Patent · US Active

Resistive memory element arrays with shared electrode strips

US12376315B2 · kind B2 · utility

0Cited by

5References

20Claims

0Family size

Assignee

GLOBALFOUNDRIES U.S. Inc. · US

Inventors

Venkatesh P. Gopinath · Planada, US
Bipul C. Paul · Sunnyvale, US
Xiaoli Hu · Shanghai, CN

Key dates

Filing date	Jul 18, 2022
Grant date	Jul 29, 2025
Priority date	—
Expiry date	Jan 5, 2044

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/8833
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Structures that include resistive memory elements and methods of forming a structure that includes resistive memory elements. The structure comprises a first plurality of resistive memory elements including a first plurality of bottom electrodes, a first top electrode, and a first switching layer between the first top electrode and the first plurality of bottom electrodes. The structure further comprises a second plurality of resistive memory elements including a second plurality of bottom electrodes, a second top electrode, and a second switching layer between the second top electrode and the second plurality of bottom electrodes. The first top electrode is shared by the first plurality of resistive memory elements, and the second top electrode is shared by the second plurality of resistive memory elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.