Imaging device with embedded conductive layers
US12376410B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2020 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Jul 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a highly functional imaging device that can be manufactured through a small number of steps. A first stacked body is formed in which a circuit provided with a transistor including a metal oxide in its channel formation region (hereinafter, OS transistor) is stacked over a circuit including a Si transistor. A second stacked body is formed in which an OS transistor is provided over a Si photodiode. Layers including the OS transistors of the first stacked body and the second stacked body are bonded to each other to obtain electrical connection between circuits. With such a structure, even when a structure is employed in which a plurality of circuits having different functions are stacked, the number of polishing steps and bonding steps can be reduced, improving the yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.