Photoelectric detector

US12376418B2 · kind B2 · utility

Assignee

• WUHAN OPTICAL VALLEY INFORMATION OPTOELECTRONICS INNOVATION CENTER CO., LTD · CN

Inventors

• Xiao Hu · Shanghai, CN
• Xi Xiao · 红钢城街道, CN
• Lei Wang · Singapore, SG
• Daigao Chen · Hubei, CN
• Yuguang Zhang · 红钢城街道, CN
• Miaofeng Li · 红钢城街道, CN

Key dates

• Filing date: Dec 4, 2020
• Grant date: Jul 29, 2025
• Expiry date: Sep 16, 2042

Classification

• Technology area (CPC G): Physics
• CPC primary: G02B2006/1215
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Provided is a photoelectric detector, comprising: a silicon layer (110), the silicon layer (110) comprising a first-doping-type doped region (111); a germanium layer (120) in contact with the silicon layer (110), the germanium layer (120) comprising a second-doping-type doped region (121); and a silicon nitride waveguide (130), the silicon nitride waveguide (130) being arranged surrounding the germanium layer (120) along the extension directions of at least three side walls of the germanium layer (120), wherein the silicon nitride waveguide (130) is used for transmitting an optical signal and coupling the optical signal to the germanium layer (120), and the germanium layer (120) is used for detecting the optical signal and converting the optical signal into an electrical signal.