Patent · US Active

Process for fabricating a semiconductor diode via wet and dry etches

US12376423B2 · kind B2 · utility

0Cited by

1References

8Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Bertrand Szelag · Grenoble, FR
Laetitia Adelmini · Grenoble, FR

Key dates

Filing date	Sep 13, 2022
Grant date	Jul 29, 2025
Priority date	—
Expiry date	Nov 1, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/176
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to a process for fabricating a semiconductor diode (1) via transfer of a semiconductor stack (20) then local etching to form a semiconductor pad (30), the production of the semiconductor pad (30) comprising a plurality of sequences comprising a dry etch that leaves a residual segment (23.1; 22.1), formation of a hard-mask spacer (42.1; 43.1), then a wet etch of the residual segment (23.1; 22.1).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.