Flexible monolithic all polycrystalline silicon carbide neural interface device and method of manufacture
US12376776B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 10, 2021 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Jan 17, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F3/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An implantable, conformal, neural interface device fabricated completely from neuro-compatible SiC and method of manufacture thereof, includes at least one elongated probe to be placed in a brain of a subject of interest, the at least one elongated probe comprising a plurality of electrodes positioned on a surface of the elongated probe, each of the plurality of electrodes comprising a conductive mesa consisting of polycrystalline silicon carbide (SiC), an insulative layer consisting of amorphous SiC, the insulative layer positioned to surround the conductive mesa absent a window through the amorphous SiC exposing a surface of the conductive mesa. The elongated probe is integral with, the probe base comprising a plurality of contact pads, each of the plurality of contact pads in electrical communication with one of the plurality of electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.