Pulsed laser deposition method
US12378660B2 · kind B2 · utility
Assignees
- CHONGQING HUAPU INFORMATION TECHNOLOGY CO., LTD.
- CHONGQING HUAPU QUANTUM TECHNOLOGY CO., LTD.
- CHONGQING HUAPU NEW ENERGY CO., LTD.
- CHONGQING MENGHE BIOTECHNOLOGY CO., LTD.
- YUNNAN HUAPU QUANTUM MATERIAL CO., LTD
- ROI OPTOELECTRONICS TECHNOLOGY CO, LTD.
- GUANGDONG ROI OPTOELECTRONICS TECHNOLOGY CO., LTD.
- CHONGQING INSTITUTE OF EAST CHINA NORMAL UNIVERSITY
- EAST CHINA NORMAL UNIVERSITY
Inventors
Key dates
| Filing date | Nov 21, 2023 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Nov 21, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/542
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A pulsed laser deposition method is provided. The method includes emitting a plurality of groups of femtosecond pulses, focusing the plurality of groups of femtosecond pulses into a plurality of groups of femtosecond filaments by lenses, and cross-coupling the plurality of groups of femtosecond filaments to form n beams of plasma gratings; exciting a target material by using a first plasma grating; and adjusting angles of the lenses and time delay between a plurality of beams of femtosecond pulses; coupling and splicing a second plasma grating with the first plasma grating along a grating pattern of the first plasma grating, until a nth plasma grating is coupled and spliced with a (n−1)th plasma grating along a grating pattern of the (n−1)th plasma grating to form a plasma grating channel; and exciting the target material by using the plasma grating channel to complete deposition on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.