Method for heat-treating silicon wafer
US12378695B2 · kind B2 · utility
0Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2019 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Nov 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for heat-treating a silicon wafer in an inert gas atmosphere, wherein it is possible to discharge SiO gas produced in melting a natural oxide film on the surface of the silicon wafer efficiently, to suppress the accumulation of reaction products in the heat treatment chamber, and to prevent slip deterioration. The wafer is held for a period of 5 to 30 sec inclusive, the rotational speed of the wafer is set to 80 to 120 rpm, and further the inert gas supply in the chamber is controlled so that the gas replacement rate is 90% or more in a temperature range of 900 to 1100° C. inclusive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.