Cover for an infrared detector and a method of fabricating a cover for an infrared detector
US12379534B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2021 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Oct 1, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B3/08
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A cover for an infrared detector and a method of fabricating the cover are disclosed. The cover comprises a wafer comprising a material such as silicon that transmits infrared radiation. The wafer has a first surface and a second surface opposite the first surface. An antireflective region is formed in the wafer to enhance transmission of infrared radiation through the cover. The antireflective region comprises a first plurality of antireflective elements such as moth-eyes formed in the first surface. The first plurality of antireflective elements are sized and shaped and arranged relative to one another to form a region of graded refractive index at the first surface so as to reduce the amount of infrared radiation reflected by the cover at the antireflective region. The cover comprises a wall extending from the first surface and surrounding the antireflective region. The wall comprises a plurality of layers of material deposited on the wafer so that, when the cover is bonded to a sensor substrate via the wall, a cavity is formed that encapsulates a sensor region of the sensor substrate. The depth of the cavity may be adjusted by depositing the plurality of layers of material with…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.