Patent · US Active

Control method, semiconductor memory, and electronic device

US12380961B2 · kind B2 · utility

0Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 17, 2023
Grant dateAug 5, 2025
Priority date
Expiry dateJul 22, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C29/028
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An impedance control strategy for a Data Mask Pin (DM pin) in a preset test mode is provided, so that the impedance of the DM pin in the preset test mode may be defined. In addition, the relation between a control signal configured to control whether to enable the DM pin in a Double Data Rate 5 SDRAM (DDR5) and a control signal configured to control whether the DM pin is a test object in a Package Output Driver Test Mode (PODTM) is specified. The impedance of the DM pin may be tested in the preset test mode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.