Inherent area selective deposition of silicon-containing dielectric on metal substrate
US12381076B2 · kind B2 · utility
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37Claims
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Key dates
| Filing date | Aug 1, 2024 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Aug 1, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An inherently selective process for the deposition of silicon-containing dielectric layers on metal layers includes atomic layer deposition or chemical vapor deposition utilizing a chemical precursor comprising silicon and sulfur, and an oxidant. An optional buffer layer may be present between the metal layer and the selectively deposited film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.