Self-amplified resonators with embedded piezoresistive elements for high performance, ultra-low SWaP microwave and millimeter-wave applications
US12381512B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 27, 2023 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Nov 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/02314
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one aspect, the disclosure relates to a super high frequency (SHF) or extremely high frequency (EHF) bulk acoustic resonator that includes a nanostructure, wherein the nanostructure includes a substrate, a three-dimensional structure disposed on the substrate, wherein the three-dimensional structure includes a planar structure including at least one nanocomponent and a matrix material contacting the nanocomponent on at least one side, the matrix material including an SiGe alloy or Ge. The disclosed bulk acoustic resonator operates at frequencies of from about 100 MHz to about 100 GHz, is capable of self-amplification upon application of direct current or voltage, and has a Q factor amplification exceeding 1. Also disclosed are methods for amplification of mechanical resonance in the disclosed bulk acoustic resonators and devices incorporating the bulk acoustic resonators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.