Methods of manufacturing bulk acoustic wave resonators with patterned mass loading layers
US12381529B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2021 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Jun 2, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/0442
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Methods of manufacturing bulk acoustic wave resonators are disclosed. During a common processing step, a first patterned mass loading layer for a first bulk acoustic wave resonator is formed and a second patterned mass loading layer for a second bulk acoustic wave resonator is formed. The first patterned mass loading layer has a different density than the second patterned mass loading layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.