Patent · US Active

Thin-film LiTaO3 SAW resonator on silicon substrate with reduced spurious modes

US12381531B2 · kind B2 · utility

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11Claims

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Assignee

RF360 Singapore Pte. Ltd. · SG

Inventors

Matthias Knapp · Munich, DE
Manuel Sabbagh · Dorfen, DE
Gholamreza Dadgar Javid · Munich, DE

Key dates

Filing date	Jun 25, 2020
Grant date	Aug 5, 2025
Priority date	—
Expiry date	Nov 26, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH03H9/725
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A SAW resonator with reduced spurious modes is provided. The resonator comprises a (111) silicon carrier substrate (CS), an electrode structure (ES) and a piezoelectric layer (PIL). The carrier substrate has a crystal orientation with the Euler angles (−45°±10°; −54°±10°; 60°±30°) and the piezoelectric layer comprises LiTaO3 and has a crystal orientation with the Euler angles (0°; 56°±8°; 0°). There may be intermediate layers (IL1, IL2) of SiO2 and amorphous or polycrystalline materials. In addition a silicon nitride layer is provided as passivation (PAL). Electrodes are made of aluminum. Thicknesses of all layers are selected in particular ranges to optimize SAW behaviour.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.