Bulk acoustic wave resonator and method for manufacturing the same
US12381533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2024 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Nov 27, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk acoustic wave (BAW) resonator includes a piezoelectric layer, a first electrode layer disposed on a first side of the piezoelectric layer and including a first electrode and an additional electrode electrically isolated from each other, a second electrode layer disposed on a second side of the piezoelectric layer and including a second electrode, one or more conductive pads disposed on the second side of the piezoelectric layer and at least including an interconnection pad electrically connected to the second electrode and the additional electrode, a carrier structure disposed on the first side of the piezoelectric layer, a cover structure disposed on the second side of the piezoelectric layer and including a cover bonding layer and a cover substrate. A first cavity is disposed between the carrier structure and the piezoelectric layer. A second cavity is disposed between the cover structure and the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.