Semiconductor device and manufacturing method

US12382679B2 · kind B2 · utility

Assignees

• University of Electronic Science and Technology of China · CN
• Institute of Electronic and Information Engineering of UESTC in Guangdong · CN

Inventors

• Ming Qiao · Chengdu, CN
• Ruidi WANG · Tianjin, CN
• Yibing Wang · Pasadena, US
• Wenyang Bai · Chengdu, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Jun 3, 2022
• Grant date: Aug 5, 2025
• Expiry date: Mar 8, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0297
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for manufacturing a semiconductor device is provided. A drift region and a compensation region are formed through a deep trench etching and a filling technology. A plurality of modulation doping regions are formed at a top of the drift region by an epitaxy and an ion implantation. A modulation region is introduced, wherein the modulation region flexibly modifies capacitance characteristics and achieve improved dynamic characteristics.