Semiconductor apparatus and method for manufacturing semiconductor apparatus
US12382688B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2022 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Dec 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor apparatus, wherein a doping concentration distribution in the buffer region has a deepest slope where a doping concentration monotonically decreases to a position where it comes in contact with the drift region in a direction from the lower surface of the semiconductor substrate toward an upper surface, a hydrogen chemical concentration distribution in the buffer region includes in a first depth range provided with the slope: a first decrease portion where a hydrogen chemical concentration decreases toward the upper surface side; a second decrease portion located closer to the upper surface side than the first decrease portion is and where the chemical concentration decreases; and an intermediate portion arranged between the first and second decrease portions, and the intermediate portion has: a flat portion where the distribution is uniform; a peak in a slope of the chemical concentration; or a kink portion of the chemical concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.