Semiconductor device and electronic apparatus including the semiconductor device
US12382704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2022 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Aug 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
A semiconductor device includes: a first source/drain region; a second source/drain region; a channel between the first source/drain region and the second source/drain region; an interfacial insulating layer on the channel; a ferroelectric layer on the interfacial insulating layer; and a gate electrode on the ferroelectric layer, wherein, when a numerical value of dielectric constant of the interfacial insulating layer is K and a numerical value of remnant polarization of the ferroelectric layer is Pr, a material of the interfacial insulating layer and a material of the ferroelectric layer are selected so that K/Pr is 1 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.