Semiconductor device and forming method thereof
US12382705B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 13, 2023 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Nov 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A method includes forming source/drain regions in a semiconductor substrate; depositing a zirconium-containing oxide layer over a channel region in the semiconductor substrate and between the source/drain region; forming a titanium oxide layer in contact with the zirconium-containing oxide layer; forming a top electrode over the zirconium-containing oxide layer, wherein no annealing is performed after depositing the zirconium-containing oxide layer and prior to forming the top electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.