Passivated photodiode comprising a ferroelectric peripheral portion

US12382732B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Abdelkader Aliane · Grenoble, FR
• Hacile KAYA · Grenoble, FR

Key dates

• Filing date: Sep 17, 2021
• Grant date: Aug 5, 2025
• Expiry date: Jan 30, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/00

Abstract

A photodiode including a detection portion having a doped first region, a doped second region and an intermediate region; a dielectric layer; and a semiconductor peripheral portion. It also includes a ferroelectric peripheral portion located between and in contact with the intermediate layer and the dielectric layer, and located between the first region and the semiconductor peripheral portion and surrounding the first region in the main plane.