Nanorod light emitting device, method of manufacturing the same, and display apparatus including the same
US12382751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2024 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Apr 16, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 μm to about 10 μm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.