Dopant-vacancy centers in materials and methods of making thereof
US12384683B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Oct 25, 2021 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Dec 20, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/16
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
This disclosure provides systems, methods, and apparatus related to color centers. In one aspect, a method includes providing diamond doped with a dopant. A heavy-ion is directed to the diamond that passes through the diamond. The heavy-ion forms a line of dopant-vacancy centers as it passes through the diamond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.