Method for preparing boron carbide material

US12384725B2 · kind B2 · utility

Assignees

• YUNNAN HUAPU QUANTUM MATERIAL CO., LTD · CN
• ROI OPTOELECTRONICS TECHNOLOGY CO, LTD. · CN
• CHONGQING INSTITUTE OF EAST CHINA NORMAL UNIVERSITY · CN
• EAST CHINA NORMAL UNIVERSITY · CN

Inventors

• Heping Zeng · Chongqing, CN
• Mengyun Hu · Lo Wu, CN
• Wei Qiao · Lincoln, US

Key dates

• Filing date: Mar 24, 2022
• Grant date: Aug 12, 2025
• Expiry date: Jun 13, 2044

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P20/10
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A method for preparing a boron carbide material includes: providing raw materials of a boron material, a carbon material and a rare earth oxide, wherein an element molar ratio B:C of the boron material to the carbon material is in a range of 4:1 to 4:7, and the rare earth oxide is in an amount of 5 wt % or less based on a total weight of the raw materials, mixing and milling the raw materials to obtain a mixture, compressing the mixture into a tablet form by a tablet press, and sintering the compressed mixture by a laser, wherein the laser has a laser wavelength of 980 nm, a laser power in a range of 100 to 3000 W, and a laser irradiation time of 3 to 60 s.