Sputter deposition apparatus and method
US12385123B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2020 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Jan 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3452
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Certain examples described herein relate to a sputter deposition apparatus including a guiding member to guide a substrate in a conveyance direction, a plasma source to generate a plasma, and a magnet arrangement. The magnet arrangement is configured to confine the plasma within the apparatus to a pre-treatment zone, within which the substrate is exposed to the plasma in use. The magnet arrangement is also configured to confine the plasma within the apparatus to a sputter deposition zone, located after the pre-treatment zone in the conveyance direction, to provide for sputter deposition of a target material to the substrate in use. The pre-treatment and sputter deposition zones are disposed about the guiding member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.