Patent · US Active

Method for uniform growth of bi-layer transition metal dichalcogenide continuous films

US12385140B2 · kind B2 · utility

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4Claims

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Assignee

Nanjing University · CN

Inventors

Xinran Wang · San Ramon, US
Lei Liu · Thousand Oaks, US
Taotao Li · Nanjing, CN
Yi Shi · Shanghai, CN

Key dates

Filing date	Apr 20, 2022
Grant date	Aug 12, 2025
Priority date	—
Expiry date	Mar 6, 2043

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/48
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A large-area, uniform, and continuous films of bi-layer transition metal dichalcogenide (TMDC) and preparation method comprises that the bi-layer TMDC continuous films are grown on a substrate through the merging of bi-layer domains; the top and bottom layers of the bi-layer domains have equal size and grow synchronously, which guarantees uniformity of the bi-layer films; the bi-layer domains were nucleated at the surface steps of the substrate which require a height no less than 0.8 nm; the bi-layer TMDCs films include molybdenum disulfide, tungsten disulfide, molybdenum diselenide, and tungsten diselenide, and the size of the bi-layer TMDC films reaches centimeter-level and above, limited only by the substrate size.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.