Patent · US Active

Method and apparatus for sputter deposition of target material to a substrate

US12385141B2 · kind B2 · utility

0Cited by
29References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 10, 2020
Grant dateAug 12, 2025
Priority date
Expiry dateApr 3, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/34
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

An apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate portion in which a substrate is provided and a target portion in which target material is provided, in use. The target portion and the substrate portion define between them a deposition zone. The apparatus includes an antenna arrangement for generating plasma, in use, and a confining arrangement. The confining arrangement includes a first element between the antenna arrangement and the deposition zone and a second element. The antenna arrangement is between the second element and the deposition zone. The first element confines the plasma towards the deposition zone to provide for sputter deposition of target material to the substrate, in use. The second element confines the plasma away from the second element, towards the antenna arrangement and, via the first element, towards the deposition zone, in use.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.